METHOD FOR FORMING SILICIDE LAYER AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method for forming a silicide layer and a method for manufacturing a semiconductor device using the same are provided to be capable of preventing the increase of surface resistance due to the disconnection of a silicide layer. CONSTITUTION: A junction part made of a conductive layer(202) is formed at the upper portion of a silicon substrate(200). A metal layer(203) is formed on the entire surface of the resultant structure. An amorphous layer is formed at the upper portion of the conductive layer by carrying out an ion implantation process. A silicide layer(205) is formed at the amorphous layer by reacting silicon components of the conductive layer to metal components of the metal layer using a heat treatment. A cleaning process is carried out at the resultant structure for removing residual metal layer.