METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to increase an ashing rate of a photoresist strip chamber by inducing O2-based gas and Cl-based gas to the strip chamber and by making the gas react with the polymer remaining on a wafer so that the reacted gas is exhausted to the outside. CONSTITUTION: A TiN layer(20) and a W layer(30) are sequentially deposited on a semiconductor substrate(10). A photolithography process is performed to form a photoresist pattern. The W layer and the TiN layer are etched by using the photoresist pattern as an etch mask. The O2-based gas and the Cl-based gas are induced to the photoresist strip chamber to perform an ashing process.