发明名称 Mask pattern creating method and mask pattern creating apparatus
摘要 A method for creating a mask pattern used in multiple exposure for carrying out overlay printing of a micro-line pattern and a mask pattern a minimum line width of which is wider than a line width of the micro-line pattern to form a target pattern having a minimum line width corresponding to the line width of the micro-line pattern, the method having:a step of preparing data of the target pattern desired to form after the exposure;a step of carrying out a logical operation of predetermined micro-line pattern data and the target pattern data;a step of dividing a surface of the mask pattern into plural types of areas, based on the result of the logical operation;a step of setting a single light transmittance or a plurality of light transmittances required or allowed for the types of areas and grouping areas for which one light transmittance can be selected, in each light transmittance; anda step of synthesizing a synthetic pattern from grouped patterns formed in the respective light transmittances,wherein data of the synthetic pattern is used as data of the mask pattern.
申请公布号 US6670080(B2) 申请公布日期 2003.12.30
申请号 US19990356700 申请日期 1999.07.20
申请人 CANON KABUSHIKI KAISHA 发明人 SUGITA MITSURO;KOCHI TETSUNOBU
分类号 G03F1/14;G03F7/20;(IPC1-7):G03F9/00;G03C5/00;G06F17/50 主分类号 G03F1/14
代理机构 代理人
主权项
地址
您可能感兴趣的专利