发明名称 |
Method of fabricating a polysilicon capacitor utilizing FET and bipolar base polysilicon layers |
摘要 |
A method of forming a poly-poly capacitor, a MOS transistor, and a bipolar transistor simultaneously on a substrate comprising the steps of depositing and patterning a first layer of polysilicon on the substrate to form a first plate electrode of said capacitor and on an electrode of the MOS transistor, and depositing and patterning a second layer of polysilicon on the substrate to form a second plate electrode of said capacitor and an electrode of the bipolar transistor.
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申请公布号 |
US6670228(B2) |
申请公布日期 |
2003.12.30 |
申请号 |
US20030339151 |
申请日期 |
2003.01.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOLBAUGH DOUGLAS DUANE;FREEMAN GREGORY GOWER;SUBBANNA SESHADRI |
分类号 |
H01L21/331;H01L21/02;H01L21/822;H01L21/8234;H01L21/8249;H01L27/04;H01L27/06;H01L29/73;H01L29/737;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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