| 摘要 |
PURPOSE: A method for forming a storage node electrode of a semiconductor device is provided to increase the capacitance by using a cylindrical storage node with a T-shaped pillar. CONSTITUTION: An interlayer dielectric(7) with a contact hole is formed on a semiconductor substrate(1). The first conductive layer(8) is formed on the interlayer dielectric including the contact hole. A hole is formed to expose the first conductive layer by selectively etching a sacrificial layer. The second conductive layer(10) is formed to connect the first conductive layer through the hole. The third conductive spacer(11) is formed at both sidewalls of the sacrificial and the first conductive pattern.
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