| 摘要 |
A semiconductor memory device includes at least one memory cell for storing digital data. A local sense amplifier is operably coupled to the at least one memory cell for receiving a first signal representative of the digital data stored in the at least one memory cell, and outputting a second signal representative of the received first signal in response to a first strobe signal. A global sense amplifier is operably coupled to the local sense amplifier for receiving the second signal, and outputting a third signal representative of the received second signal in response to a second strobe signal. Dummy circuitry is provided for-enabling generation of the first and second strobe signals.
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