| 摘要 |
PROBLEM TO BE SOLVED: To increase the selection ratio of the etching rate of an organic film to the etching rate of a photoresist film and improve the etching accuracy. SOLUTION: An acrylic resin film 13 which is an organic film is formed on the surface of a semiconductor substrate 11 and a photoresist film 14 is formed on the acrylic resin film 13 and patterned. The acrylic resin film 13 is subjected to dry-etching by the hydrolysis of the acrylic resin with gas containing sulfur or hydrogen. By the dry-etching of the acrylic resin film 13 with the gas containing sulfur or hydrogen, the acrylic resin is hydrolyzed by the reaction with the gas containing sulfur or hydrogen and, on the other hand, the photoresist is hardly hydrolyzed, so that the acrylic resin film 13 can be selectively etched in comparison with the photoresist film 14. |
