发明名称 |
THIN FILM TRANSISTOR SUBSTRATE |
摘要 |
PURPOSE: A thin film transistor substrate is provided to compensate a difference of an RC(Resistance Capacitance) delay value generated due to inequality of the length of lines in a fan-out of a thin film transistor. CONSTITUTION: An insulating substrate is provided. A plurality of gate lines(121) are formed on the insulating film and include pads to be connected with an external circuit. A plurality of data lines(171) cross the plurality of gate lines and include pads to be connected with an external circuit. A conductive pattern(93) is overlapped with the gate lines and the data lines. The length of the conductive pattern overlapped with the gate lines and the data lines decreases as the length of the gate lines or the data lines increases. |
申请公布号 |
KR20030094599(A) |
申请公布日期 |
2003.12.18 |
申请号 |
KR20020031803 |
申请日期 |
2002.06.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG, JONG UNG |
分类号 |
G02F1/1345;G02F1/1368;G09F9/30;G09G3/36;G11C11/34;H01L23/528;(IPC1-7):G02F1/134 |
主分类号 |
G02F1/1345 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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