发明名称 PROCESS FOR PREPARING NANOSTRUCTURED MATERIALS OF CONTROLLED SURFACE CHEMISTRY
摘要 A process to prepare stoichiometric-nanostructured materials comprising generating a plasma, forming an "active volume" through introduction of an oxidizing gas into the plasma, before the plasma is expanded into a field-free zone, either (1) in a region in close proximity to a zone of charge carrier generation, or (2) in a region of current conduction between field generating elements, including the surface of the field generation elements, and transferring energy from the plasma to a precursor material to form in the "active volume" at least one stoichiometric-nanostructured material and a vapor that may be condensed to form a stoichiometric-nanostructured material. The surface chemistry of the resulting nanostructured materials is substantially enhanced to yield dispersion stable materials with large zeta-potentials.
申请公布号 US2003231992(A1) 申请公布日期 2003.12.18
申请号 US20020172848 申请日期 2002.06.17
申请人 SARKAS HARRY W.;PIEPENBRINK JONATHAN 发明人 SARKAS HARRY W.;PIEPENBRINK JONATHAN
分类号 H05H1/24;B01J19/08;B01J19/12;C01B13/14;C01F7/02;C01F17/00;C01G19/00;C01G30/00;C23C4/12;C23C8/36;C23C14/00;C23C14/32;(IPC1-7):B01J19/08 主分类号 H05H1/24
代理机构 代理人
主权项
地址
您可能感兴趣的专利