Controlled aging of photoresists for faster photospeed

摘要

A method for the controlled aging of a photoresist which provides an aged photoresist that has a targeted photospeed which is faster than a conventional unaged photoresist is provided. Specifically, the inventive method includes the step of aging a solution containing at least a photoresist resin composition at a temperature below the thermal decomposition of the photoresist resin composition, but not below 20° C., for a time period that is effective in achieving a targeted photospeed which is faster than a photospeed of an unaged photoresist.