发明名称 |
Metal insulator structure with polarization-compatible buffer layer |
摘要 |
An MIS device (20) includes a semiconducting substrate (22), a silicon nitride buffer layer (24), a ferroelectric metal oxide superlattice material (26), and a noble metal top electrode (28). The layered superlattice material (26) is preferably a strontium bismuth tantalate, strontium bismuth niobate, or strontium bismuth niobium tantalate. The device is constructed according to a preferred method that includes forming the silicon nitride on the semiconducting substrate prior to deposition of the layered superlattice material. The layered superlattice material is preferably deposited using liquid polyoxyalkylated metal organic precursors that spontaneously generate a layered superlattice upon heating of the precursor solution. UV exposure during drying of the precursor liquid imparts a taxis orientation to the final crystal, and results in improved thin-film electrical properties. |
申请公布号 |
US6664115(B2) |
申请公布日期 |
2003.12.16 |
申请号 |
US20010899670 |
申请日期 |
2001.07.05 |
申请人 |
SYMETRIX CORPORATION;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
AZUMA MASAMICHI;PAZ DE ARAUJO CARLOS A. |
分类号 |
C23C16/448;C23C18/12;C30B7/00;H01L21/02;H01L21/314;H01L21/316;H01L27/108;H01L27/115;H01L29/78;(IPC1-7):H01L21/00;H01L21/31;H01L21/336 |
主分类号 |
C23C16/448 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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