| 摘要 |
PURPOSE: A method for forming a capacitor is provided to be capable of improving the etching uniformity of a gap-fill oxide layer and restraining the increase of leakage current due to an insulating layer formed at the edge portion of a trench. CONSTITUTION: After preparing a semiconductor substrate(100) having a capacitor forming region(III) and a transistor forming region(IV), trenches(102) and isolation layers(104,105) are sequentially formed at the resultant structure. The isolation layer of the capacitor forming region, is etched to a predetermined thickness. A nitrogen ion implantation is selectively carried out at the resultant structure. The first insulating layer is formed at the resultant structure by carrying out an oxidation. A polycrystalline silicon layer is formed on the entire surface of the resultant structure. Then, a capacitor electrode(112a) and a transistor electrode(112b) are formed by selectively etching the polycrystalline silicon layer and the first insulating layer using a photolithography process.
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