| 摘要 |
The invention is to realize such a semiconductor light-emitting element which is higher in external quantum efficiency than an existing LED, and lower in production cost than an existing semiconductor laser. The light transmission insulating film is formed on a continuously incline face comprising the semiconductor layers having an opening angle etched in right angled V. The V shape inclined is formed by a known technique, and both left and right inclined faces have the angle of 45°. Depending on the length of delta or the position of the light reflecting portion, probability that the light in duration of resonance is reflected may be made optimum or preferable. According to this structure, it is no longer necessary to carry but processing treatments of high degree, high precision, or high cost such as, e.g., multi-layered film coating in a resonance direction, and it is possible to structure the semiconductor light-emitting element having a resonating mechanism as a resonator though not forming end faces of high cost.
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