发明名称 Semiconductor infrared detector and method for the production thereof
摘要 A semiconductor infrared detector includes in the following order: a semiconductor substrate; a layer of electrically insulating material; and patterns formed in a semiconductor layer. The patterns are formed from at least one island that is connected to bridges which are connected to polarization electrodes. The bridges are lines having an approximately constant width lp and the islands are zones having a width li that is greater than that of the lines.
申请公布号 US6661073(B1) 申请公布日期 2003.12.09
申请号 US20020937392 申请日期 2002.04.01
申请人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE 发明人 STIEVENARD DIDIER;DELERUE CHRISTOPHE;LEGRAND BERNARD
分类号 H01L31/0248;H01L31/0352;H01L31/18;(IPC1-7):H01L31/00;G01J5/20 主分类号 H01L31/0248
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