| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent a loading effect occurring in an I-type active region formation process and avoid vulnerability of a pattern at both edges of an active region by forming the active region of a rhombus type by twice photolithography processes. CONSTITUTION: The first photoresist layer pattern of a line type is formed on a pad insulation layer on a substrate(31). The pad insulation layer and the substrate are etched to form the first trench by using the first photoresist layer pattern as a mask. The first photoresist layer pattern is eliminated. The second photoresist layer pattern of a line type with a slant angle is formed on the front surface including the first trench. The pad insulation layer and the substrate are etched to form the second trench by using the second photoresist layer pattern as a mask. The second photoresist layer pattern is removed to form an active region of a rhombus type. An isolation layer is formed to fill the first and second trenches.
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