| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a flip chip type IC which facilitates the formation of a barrier metal layer by nicely depositing a Zn layer on a circuit pattern composed of Al. <P>SOLUTION: The flip chip type IC is manufactured by a method comprising a process wherein the upper surface of a silicon wafer 1a is divided into an IC forming region A and a region B not forming the IC, and a circuit pattern 2 with a principal constituent of Al is adhered to the IC forming region A while a dummy pattern 2a having a principal constituent of Al and electrically connected to the silicon wafer 1a is adhered to the substantially whole surface of the region B not forming the IC, a process wherein a passivation layer 4 made of an insulation material is adhered so that a multitude of pad forming regions 2b and dummy patterns 2a formed on the circuit pattern 2 are exposed; and a process wherein both of the pad forming regions 2b and the dummy patterns 2a are simultaneously dipped into a zincate solution whereby the Zn layer 6 is deposited by replacing a part of Al forming the circuit pattern 2. <P>COPYRIGHT: (C)2004,JPO</p> |
