发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which the enlargement of area due to the arrangement of sub-amplifies can be reduced and power consumption for the sub-amplifiers can be reduced. <P>SOLUTION: In the semiconductor memory device having a bank provided with the prescribed storage capacity, a sub-amplifier region is arranged at a center position at which the bank is divided into two. The sub-amplifier region provided with a plurality of sub-amplifiers connected to sense amplifier sets arranged at divided two memory regions through LIO and a sub-amplifier control circuit controlling these sub-amplifiers. When a word line is selected by the sub-amplifier control circuit, power consumption caused by activation of sub-amplifiers is reduced by performing control operation activating only one side out of sub-amplifiers positioned at both sides of the word line. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2003346479(A) 申请公布日期 2003.12.05
申请号 JP20020149310 申请日期 2002.05.23
申请人 ELPIDA MEMORY INC;HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 FUJISAWA HIROKI;YOKO HIDEYUKI
分类号 H01L27/108;G11C7/06;G11C8/12;G11C11/401;G11C11/409;G11C11/4091;H01L21/8242 主分类号 H01L27/108
代理机构 代理人
主权项
地址