发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which the enlargement of area due to the arrangement of sub-amplifies can be reduced and power consumption for the sub-amplifiers can be reduced. <P>SOLUTION: In the semiconductor memory device having a bank provided with the prescribed storage capacity, a sub-amplifier region is arranged at a center position at which the bank is divided into two. The sub-amplifier region provided with a plurality of sub-amplifiers connected to sense amplifier sets arranged at divided two memory regions through LIO and a sub-amplifier control circuit controlling these sub-amplifiers. When a word line is selected by the sub-amplifier control circuit, power consumption caused by activation of sub-amplifiers is reduced by performing control operation activating only one side out of sub-amplifiers positioned at both sides of the word line. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2003346479(A) |
申请公布日期 |
2003.12.05 |
申请号 |
JP20020149310 |
申请日期 |
2002.05.23 |
申请人 |
ELPIDA MEMORY INC;HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD |
发明人 |
FUJISAWA HIROKI;YOKO HIDEYUKI |
分类号 |
H01L27/108;G11C7/06;G11C8/12;G11C11/401;G11C11/409;G11C11/4091;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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