| 摘要 |
PURPOSE:To prevent wire breakdown and defective insulation, by forming a groove in a silicon oxide film, forming a first metal layer only in the groove, forming an interlayer insulating layer and a second metal layer sequentially, thereby reducing the difference in steps formed at the end parts of the wiring metal layers. CONSTITUTION:A photoresist film 6 is attached to a silicon oxide film 6, which is formed on a silicon substrate 1. A groove is formed in the silicon oxide film 2 by etching the part of an opening 7. A metal for the first wiring layer of Al and the like is deposited, heat treatment is performed, and a first metal layer 3 is formed in the groove. Thereafter, the photoresist film 6 is removed, and an unnecessary metal layer 3' is removed together with the photoresist film 6. Then, an interlayer insulating layer 4 is formed, and finally a second metal layer of Al and the like are formed. Since the first metal layer 3 is embedded in the silicon oxide layer 2, the difference in steps yielded in the interlayer insulating layer 4 and the second metal layer 5 at the end parts can be reduced. |
