| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device wherein a threshold current can be reduced without increase in operating voltage, and at the same time, prevent oscillation wavelength shift. SOLUTION: The semiconductor laser device has a first guide layer 104 and a second guide layer 106 which sandwich an active layer 105 of multiple quantum well structure. The first guide layer 104 and the second guide layer 106 are made to adjoin to a quantum well layer 120. Further, the forbidden band width of the first guide layer 104 and the second guide layer 106 is made larger than the forbidden band width of the quantum well layer 120. At the same time, the forbidden band width of either or both of the first guide layer 104 and the second guide layer 106 is made smaller than the forbidden band width of a quantum barrier layer 121. COPYRIGHT: (C)2004,JPO
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