发明名称 |
Semiconductor device with multilayer interconnection structure |
摘要 |
A plurality of interconnection layers arranged at the same level are connected by an anti-diffusion insulating layer in a lateral direction. Interconnection layers arranged at different levels are electrically connected through a plug portion in a vertical direction. A second interlayer film is arranged only at a region directly below the interconnection layer and connects the interconnection layer with the anti-diffusion insulating layer in the vertical direction. A hollow space or an interlayer film with a low dielectric constant of at most 2.5 is located laterally adjacent to each of the plurality of interconnection layers. Thus, a semiconductor device having a multilayer interconnection structure that can improve both the strength of the interconnection layers and the transmission speed of signals, and a method of manufacturing the semiconductor device can be obtained.
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申请公布号 |
US2003222349(A1) |
申请公布日期 |
2003.12.04 |
申请号 |
US20020283286 |
申请日期 |
2002.10.30 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TOMOHISA SHINGO;TSUDA MUTSUMI;FUKADA TETSUO;TAKI MASAKAZU;SHINTANI KENJI |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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