| 发明名称 |
THIN FILMS, STRUCTURES HAVING THIN FILMS, AND METHODS OF FORMING THIN FILMS |
| 摘要 |
<p>The invention described herein relates to new titanium-comprising materials which can be utilized for forming titanium alloy barrier layers for Cu applications. Titanium alloy sputtering targets can be reactively sputtered in a nitrogen-comprising sputtering gas atmosphere to from titanium alloy nitride film, or alternatively in a nitrogen-comprising and oxygen-comprising atmosphere to form titanium alloy oxygen nitrogen thin film. The thin films formed in accordance with the present invention can contain a non-columnar grain structure, low electrical resistivity, high chemical stability, and barrier layer properties comparable or exceeding those of TaN.</p> |
| 申请公布号 |
WO03063243(A8) |
申请公布日期 |
2003.12.04 |
| 申请号 |
WO2003US02106 |
申请日期 |
2003.01.24 |
| 申请人 |
HONEYWELL INTERNATIONAL INC.;LEE, EAL, H.;THOMAS, MICHAEL, E. |
发明人 |
LEE, EAL, H.;THOMAS, MICHAEL, E. |
| 分类号 |
C23C14/06;H01L21/28;H01L21/285;H01L21/3205;H01L21/4763;H01L21/768;H01L23/48;H01L23/52;H01L23/532;H01L29/40;(IPC1-7):H01L23/48;H01L21/44 |
主分类号 |
C23C14/06 |
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