| 摘要 |
PURPOSE: A multi-layered bonding pad structure of a semiconductor device and a method for manufacturing the same are provided to be capable of preventing metal open phenomenon and crack. CONSTITUTION: A multi-layered bonding pad structure of a semiconductor device is provided with a semiconductor substrate(10), at least three metal pads(90,150,210) sequentially formed at the upper portion of the semiconductor substrate, and a plurality of intermetal dielectric layers(110,170) located between the three metal pads. At this time, the intermetal dielectric layers include wide via holes(120,180) for partially exposing the metal pads located at the lower portion of each intermetal dielectric layer. At the time, the three metal pads are electrically connected with each other through the wide via holes. |
