发明名称 |
VAPOR DEPOSITION METHOD OF LOW DIELECTRIC INSULATING FILM, THIN FILM TRANSISTOR USING THE SAME AND PREPARATION METHOD THEREOF |
摘要 |
The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof. |
申请公布号 |
AU2003269049(A1) |
申请公布日期 |
2003.12.02 |
申请号 |
AU20030269049 |
申请日期 |
2003.01.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SUNG-HOON YANG;WAN-SHICK HONG;KWAN-WOOK JUNG |
分类号 |
G02F1/1368;C23C16/30;C23C16/42;G02F1/1362;H01L21/205;H01L21/312;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786;H01L51/56;(IPC1-7):C23C16/00;H01L21/44 |
主分类号 |
G02F1/1368 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|