| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having superior electronic characteristics and reliability by preventing the corrosion of an electrode caused by a space formed in an interface between an organic insulation film and a plating film, and also to provide a method of manufacturing the same. SOLUTION: The semiconductor device comprises the electrode 2 which is formed on a semiconductor substrate 1 provided with a semiconductor integrated circuit and is electrically connected to the semiconductor integrated circuit, the organic insulation film 4 formed on the semiconductor substrate and formed with an opening 3 to expose the electrode 2, and a bump electrode formed on the electrode 2 via a bump base metal film. The bump base metal film includes a first plating film 6 formed by a first electroless plating method, and a second plating film 7 formed on the first plating film 6 by a second electroless plating method which uses plating liquid different from one used in the first electroless plating method. The thickness of the first plating film 6 is larger than that of the organic insulation film 4, with the first plating film 6 so formed that a peripheral section 6a overlaps the organic insulation film 4. COPYRIGHT: (C)2004,JPO
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