发明名称 |
LC-elementti, puolijohdelaite ja LC-elementin valmistusmenetelmä |
摘要 |
An LC element and an semiconductor device comprising a second electrode (26) having a predetermined shape formed in direct contact with the surface of a semiconductor substrate (30), and a first electrode (10) having a predetermined shape formed interspaced by an insulation layer (28) on the semiconductor substrate surface; and a method of manufacturing the LC element. A channel (22) formed along the first electrode (10) on application of a predetermined gate voltage to a control electrode connected to the first electrode (10) and the second electrode (26) respectively function as inductors, while a distributed constant type capacitor is also formed between these; and by using the channel (22) as a signal transmission line, the LC element and a semiconductor device give excellent attenuation characteristics. The LC element and semiconductor device are easily manufactured, while parts assembly work in subsequent processing can be abbreviated, formation as a portion of an IC or LSI device is possible, and characteristics can also be controlled. <IMAGE>
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申请公布号 |
FI112406(B) |
申请公布日期 |
2003.11.28 |
申请号 |
FI19940005242 |
申请日期 |
1994.11.08 |
申请人 |
IKEDA,TAKESHI;OKAMURA,SUSUMU |
发明人 |
IKEDA,TAKESHI;OKAMURA,SUSUMU |
分类号 |
H01L27/08;H03H7/01;(IPC1-7):H01L27/08;H01L27/04;H01L21/822 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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