| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a diode where a breakdown voltage is not degraded since a reverse recovery characteristic is favorable and a defect does not occur in the upper main face of a Si substrate when a wire is bonded to an anode electrode, and to provide a manufacturing method of the diode. <P>SOLUTION: The diode 100 is provided with the Si substrate having a cathode N<SP>+</SP>layer 101 and an N<SP>-</SP>layer 102. Impurity such as white gold whose barrier height is lower than silicon is injected to a region where anode P layers 103 are not formed at the upper part of the N<SP>-</SP>layer 102. Consequently, Schottky junction regions 104 are formed. A barrier metal 105 is formed between the Si substrate and the anode electrode 106. <P>COPYRIGHT: (C)2004,JPO |
