| 摘要 |
PURPOSE: A CVD(Chemical Vapor Deposition) apparatus for semiconductor fabrication is provided to prevent a temperature difference between a center part and an edge part on a wafer by forming the first and the second baffle between a susceptor and a heater. CONSTITUTION: A CVD apparatus for semiconductor fabrication includes a susceptor(111), a susceptor frame(113), a heater(122), a heater frame(124), and a reaction gas distribution unit(140). The susceptor(111) is used for absorbing selectively a wafer. The susceptor frame(113) is used for supporting the susceptor(111). The heater(122) is installed at a position apart from the susceptor(111) in order to heat the wafer. The heater frame(124) is used for supporting the heater(122). The reaction gas distribution unit(140) injects the reaction gas to the wafer. The first and the second baffle(115,126) are installed between the susceptor(111) and the heater(122).
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