发明名称 Integrated equipment set for forming shallow trench isolation regions
摘要 A method is provided that includes (1) receiving information about a substrate etched within an etch subsystem from an integrated inspection system of the etch subsystem; (2) determining a deposition process to perform within a deposition subsystem based at least in part on the information received from the inspection system of the etch subsystem; (3) directing the deposition subsystem to deposit an insulating material on the substrate based on the deposition process; (4) receiving information about the insulating material deposited on the substrate from an integrated inspection system of the deposition subsystem; (5) determining a planarization process to perform within a planarization subsystem based at least in part on the information received from the inspection system of the deposition subsystem; and (6) directing the planarization subsystem to planarize the substrate based on the planarization process. Other methods, systems, apparatus, data structures and computer program products are also provided.
申请公布号 US2003220708(A1) 申请公布日期 2003.11.27
申请号 US20020306770 申请日期 2002.11.27
申请人 APPLIED MATERIALS, INC. 发明人 SAHIN TURGUT;SMAYLING MICHAEL C.
分类号 H01L21/00;(IPC1-7):G06F19/00 主分类号 H01L21/00
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