发明名称 |
PROCESS FOR PREPARATION OF SEPARABLE SEMICONDUCTOR ASSEMBLIES, PARTICULARLY TO FORM SUBSTRATES FOR ELECTRONICS, OPTOELECTRONICS AND OPTICS |
摘要 |
The invention propoeses processes for the preparation of an assembly (10, 12, 22, 30) based on semiconductors comprising a first layer such as a thin layer (22). A process comprises the followingsteps: form an interface layer (26) on only one (22) of the two layers, bring the layer on which the interface layer is formed and the other exposed layer into contact with each other, the interface layer (26) being chosen as a function of the material in the exposed layer to form a bonding interface that can be separated under the action of stresses applied after exposure to temperatures within a predetermined range. Application to the manufacture of substrates that can be separated from the support in the fields of electronics, optoelectronics or optics. |
申请公布号 |
WO03063214(A3) |
申请公布日期 |
2003.11.27 |
申请号 |
WO2003IB00424 |
申请日期 |
2003.01.21 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;LETERTRE, FABRICE;GHYSELEN, BRUNO;RAYSSAC, OLIVIER |
发明人 |
LETERTRE, FABRICE;GHYSELEN, BRUNO;RAYSSAC, OLIVIER |
分类号 |
H01L27/12;H01L21/02;H01L21/04;H01L21/76;H01L21/762;H01L33/00;H01L33/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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