Semiconductor device and manufacturing method thereof

摘要

In the present invention, there is disclosed a semiconductor device whose copper interconnect is formed multilevel in structure; wherein at least one interlayer film lying between layers of the copper interconnect has a layered structure in which an amorphous carbon film containing fluorine and a SiO2 film are laid in this order from the side of the underlying copper interconnect; a layered structure in which a silicon nitride and then a silicon nitride oxide or a silicon carbide are laid in this order; or a structure comprising a single silicon carbide layer. Such interlayer films serve as anti-reflective coatings.