METHOD FOR FABRICATING RETICLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a reticle of a semiconductor device is provided to prevent a peripheral area from being etched in a photolithography process using a phase shift mask(PSM) of high transmissivity by performing a photolithography process using a reticle from which a shifter layer of the peripheral area having no pattern is eliminated. CONSTITUTION: A mask pattern that defines a light transmission region is formed on a transparent substrate(31) in which a cell area and the peripheral area are defined. The mask pattern is composed of a stacked structure of a mask layer and a shifter layer(35). The shifter layer in the peripheral area is removed.