| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a small-sized semiconductor device which is thin. <P>SOLUTION: A silicon wafer is prepared. Oxide films are formed on the main surface and the rear of the wafer. An insulating film is selectively formed on the main surface of the wafer, and a plurality of through holes are formed. A metal lamination film is formed on the oxide film on the through hole bottom. On the metal lamination film, a first metal film and a second metal film are formed, and metal pedestals are formed. A semiconductor chip in which a diode is formed is fixed to the main surface of one metal pedestal via one electrode. The other electrode is connected with the other metal pedestal by a using conductive wire. The semiconductor chip and the wire are covered with an insulating resin layer. The oxide film bonded to the rear of a sealed body is left, and the silicon wafer and the oxide film are removed. The oxide film on a rear of the resin layer is eliminated by etching. A metal plating film is formed on the surface of the metal pedestal which is exposed to the rear of the resin layer. The semiconductor device is formed by cutting the resin layer lengthwise and crosswise. <P>COPYRIGHT: (C)2004,JPO |
