| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam exposure method which is capable of smoothing an uneven surface caused by a difference in area density of a pattern in a chemical mechanical polishing operation and prevented from deteriorating in throughput. SOLUTION: When an exposure operation is carried out by the use of an electron beam direct drawing aligner of variable forming beam type, a pattern to draw is divided into a dummy pattern and the other pattern. After the dummy patter is exposed and then baked under a prescribed condition, the pattern other than the dummy pattern is exposed and subjected to a post-exposure baking, whereby the dummy pattern can be improved in sensitivity without deteriorating the other pattern in resolution or sensitivity, and the electron beam exposure method can be prevented from deteriorating in throughput even in a case in which the dummy pattern is provided so as to smooth an uneven surface occurring in a chemical mechanical polishing operation. COPYRIGHT: (C)2004,JPO
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