MAGNETIC MEMORY CELL HAVING MAGNETIC TUNNEL JUNCTION DEVICE

摘要

PURPOSE: A magnetic memory cell having a magnetic tunnel junction(MTJ) device is provided, which is appropriate for assuring sensing margin enough to read current variation according to resistance of a magnetic tunnel junction. CONSTITUTION: The magnetic memory cell includes a word line(WL), and a bit line(BL), and a switching device(100) and a magnetic tunnel junction device(200) constituting a unit cell by being connected in parallel each other on an area where the above word line and the above bit line cross. The word line is connected to the first stage of the above switching device, and the second stage of the switching device and the first stage of the magnetic tunnel junction device are connected to a ground stage in common. And the third stage of the switching device and the second stage of the magnetic tunnel junction device are connected to the bit line in common.