A Planar Schottky Diode and Manufacturing Method

摘要

A Schottky diode (1) has an N+ GaAs active mesa (3) with a vertical side wall on which is grown a nGaAs epilayer (4). A cathode (9) extends over the substrate (3) at one end and the mesa (3). An Si02 barrier isolates the cathode (9) from the epilayer (4). An anode has a contact pad (8) and a narrow finger (7) extending centrally on the substrate (2) to contact the epilayer (4) to provide a Schottky contact of very small area. The cathode is annealed on the substrate (2) and active mesa (3) to achieve particularly low resistance, before the Schottky contact is formed.