Monolithic multi-wavelength vertical-cavity surface emitting laser array and method of manufacture therefor

摘要

A monolithic array (60) of vertical cavity lasers with different emission wavelengths on a single wafer (52), and method of manufacture therefor, is provided. A first reflector (64) is over the semiconductor substrate (22) (62) with a photoactive semiconductor layer. A reflector support (74) defines first and second air gaps (84) (85) with the photoactive semiconductor layer. The second and third air gap (30) (84) (85)s (85) are made to be different from each other by geometric differences in the reflector support (74) structure. Second and third reflectors (80) (81) are formed over the reflector support (74) whereby a first laser is formed by the first reflector (64), the photoactive semiconductor structure (66), the first air gap (84), and the second reflector (80) and whereby a second laser is formed by the first reflector (64), the photoactive semiconductor structure (66), the second air gap (85), and the third reflector (81). The emission wavelengths of the first and second lasers are different because of the different sizes of the first and second air gaps (84) (85).