| 发明名称 |
FERROELECTRIC THIN FILM, METAL THIN FILM OR OXIDE THIN FILM, AND METHOD AND APPARATUS FOR PREPARATION THEREOF, AND ELECTRIC OR ELECTRONIC DEVICE USING SAID THIN FILM |
| 摘要 |
The object of the present invention is to provide a ferroelectric thin film that has the best range of the composition where an excellent remanent polarization characteristic is obtained and, at the same time, has a bismuth type layered crystal structure with high reliability. <??>The ferroelectric thin film of the present invention is a ferroelectric thin film of layered crystal structure comprising at least-tantalum and oxygen (O) among carbon, Strontium (Sr), bismuth (Bi), tantalum (Ta), and niobium (Nb), characterized by assuming the composition formula to be SrBiyTa2O9+/-d or SrxBiy(Ta,Nb)2O9+/-d (provided that, 0.90</=x<1.00, 1.70< y</=3.20, and 0</=d</= 1.00) and the carbon content be 5at% or less. <IMAGE>
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| 申请公布号 |
EP1363320(A1) |
申请公布日期 |
2003.11.19 |
| 申请号 |
EP20020715794 |
申请日期 |
2002.01.18 |
| 申请人 |
KABUSHIKI KAISHA WATANABE SHOKO;TODA, MASAYUKI |
发明人 |
YAMOTO, HISAYOSHI;TODA, MASAYUKI;KUSUHARA, MASAKI;UMEDA, MASARU;FUKAGAWA, MITSURU |
| 分类号 |
H01L21/31;H01L21/316;C23C16/40;C23C16/448;H01L21/02;H01L21/8246;H01L27/115;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/31 |
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