| 摘要 |
An opening is formed within insulative material to proximate a silicon comprising substrate. Titanium is deposited within the opening to form a first layer comprising titanium suicide. It is exposed to a nitrogen containing plasma effective to transform at least an outer portion thereof into a second layer comprising titanium nitride. Titanium is deposited within the opening to form an elemental titanium comprising third layer. The third layer is exposed to a nitrogen containing plasma effective to transform at least an outer portion thereof into a layer comprising titanium nitride. A metal is deposited within the opening over the transformed third layer. Any remnant of first layer, second layer, third layer, transformed third layer and metal materials is removed from over the insulative material to form an isolated conductive contact within the opening. At least the depositing to form the first layer is by chemical vapor deposition.
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