发明名称 Semiconductor memory device
摘要 For a memory array, a main data bus commonly used for first and second data bit widths, and a main data bus used only for the second data bit width are disposed. According to a data bit width, connection between memory blocks and main data lines is switched. The main data buses are connected to write/read circuits, and expanding/compressing operation on data bits is performed by an expansion/compression circuit in a unit of a predetermined number of bits. Thus, with the same configuration irrespective of data bit width, compression of data bits in the multi-bit test can be performed to output the compression result to the same data terminal.
申请公布号 US6650582(B2) 申请公布日期 2003.11.18
申请号 US20020211339 申请日期 2002.08.05
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MATSUMOTO JUNKO;YAMAUCHI TADAAKI;OKAMOTO TAKEO
分类号 G01R31/28;G01R31/3185;G11C7/10;G11C11/401;G11C11/409;G11C11/41;G11C11/413;G11C11/417;G11C29/00;G11C29/34;(IPC1-7):G11C7/00 主分类号 G01R31/28
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