| 摘要 |
Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated surfaces are disclosed. A substituted organosilane compound precursor is applied to the surface by chemical vapor deposition where it will react with the surface and form a film which will have a dielectric constant, K, less than 2.5. The substituted organosilane compounds have the general formula:where, R1 is selected from the group consisting of a cyclic or acyclic hydrocarbon having from one carbon to eight carbon atoms; R2, R3 and R4 are the same or different, and are selected from the groups consisting of H, CH3, vinyl or other hydrocarbon containing two or more carbon atoms; R5, R6, R7, R8, R9, R10 are a cyclic or acyclic hydrocarbon group including H, and can be the same or different, having from one carbon to eight carbon atoms; R' is a linking group between the two silicon atoms, and can be a cyclic or acyclic hydrocarbon group, having from one carbon to six carbon atoms; R11 is a chelate hydrocarbon group containing two or more carbon atoms, R12 and R13 are a cyclic or acyclic hydrocarbon group including H, and can be the same or different.
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