| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a composition for abrasive for CMP processing with a high selectivity which has a big grinding rate for a copper film and a small grinding rate for a tantalum compound in a CMP processing of a semiconductor device having the copper film and the tantalum compound, and excellent in smoothness of the copper film surface. <P>SOLUTION: The composition for abrasive comprises (A) a grinding agent comprising an organic polymer with 5-500 nm of average particle size, (B) benzotriazole or its derivative, (C) an organic acid, (D) hydrogen peroxide, (E) polyvinyl alcohol and (F) water. <P>COPYRIGHT: (C)2004,JPO</p> |
