| 摘要 |
PROBLEM TO BE SOLVED: To form a perovskite structure of a ferroelectric film having orientation (111) by an MOCVD method. SOLUTION: When forming the perovskite type ferroelectric film by an MOCVD method, an initial layer having orientation (111) is formed first in a low oxygen concentration, the deposition of the ferroelectric film is continued thereon in a high oxygen concentration, and then the whole of the ferroelectric film is subjected to the orientation (111) by using the initial layer as a core. COPYRIGHT: (C)2004,JPO
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