SEMICONDUCTOR DEVICE COMPRISING A MIM CAPACITOR AND AN INTERCONNECT STRUCTURE

摘要

A method of forming a metal-insulator-metal capacitor (see e.g., Figure 1) in a back end of line structure comprises forming a metal bottom plate 16 in a first metalization layer 14, sputter depositing a high dielectric constant material 18 over the bottom plate 16, and forming a metal top plate 20 in a second metalization layer 22. The metal bottom plate 16 and metal top plate 22 are formed in consecutive metalization layers 14 and 22 in which interconnect structures 12 and 24 are also formed.