Computer programs and computer-implemented methods for predicting from first principles the behavior of dopants and defects in the processing of electronic materials. The distribution of dopant and defect components in a substrate lattice is predicted based on external conditions and fundamental data for a set of microscopic processes that can occur during material processing operations. The concentration behavior of one or more fast components is calculated in two stages, by solving a first relationship for a time period before the fast component reaches a pseudo steady state at which the concentration of the fast component is determined by concentration of one or more second components, and by solving a second relationship for a time period after the first component reaches the pseudo steady state. Application of these methods to modeling ultrashallow junction processing is also described.
申请公布号
WO02080045(A3)
申请公布日期
2003.11.13
申请号
WO2002US10039
申请日期
2002.03.28
申请人
CALIFORNIA INSTITUTE OF TECHNOLOGY;GODDARD, WILLIAM, A.;HWANG, GYEONG, S.