发明名称 |
HALOGEN-RESISTANT, ANODIZED ALUMINUM FOR USE IN SEMICONDUCTOR PROCESSING APPARATUS |
摘要 |
We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film, can be controlled by maintaining the content of mobile and nonmobile impurities within a specific range and controlling the particulate size and distribution of the mobile and nonmobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330°C; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained. |
申请公布号 |
WO03093521(A1) |
申请公布日期 |
2003.11.13 |
申请号 |
WO2003US13790 |
申请日期 |
2003.04.30 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LIN, YIXING;WEST, BRIAN, T.;WU, SHUN, JACKSON;STOW, CLIFFORD, C.;THACH, SENH;WANG, HONG;SUN, JENNIFER, Y. |
分类号 |
C22F1/047;C22C21/06;C22F1/00;C25D5/30;C25D11/04;C25D11/06;C25D11/16 |
主分类号 |
C22F1/047 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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