发明名称 Contact ring architecture
摘要 An integrated circuit with a VDDio bus line disposed on a first layer of the integrated circuit. The VDDio bus line is disposed along a length, and has a first width transverse to the length. A VSSio bus line is dispose on a second layer of the integrated circuit. The VSSio bus line is disposed along the length and has a second width transverse to the length. The second width of the VSSio bus line substantially overlaps the first width of the VDDio bus line. An input output cell is disposed on a third layer of the integrated circuit. The first layer, the second layer, and the third layer are all different layers of the integrated circuit. The input output cell has a first transistor electrically connected to the VDDio bus line, and a second transistor electrically connected to the VSSio bus line. The first transistor and the second transistor are disposed along the length within the input output cell.
申请公布号 US2003210076(A1) 申请公布日期 2003.11.13
申请号 US20020140967 申请日期 2002.05.08
申请人 ALI ANWAR;LAU TAUMAN T.;YEUNG MAX M. 发明人 ALI ANWAR;LAU TAUMAN T.;YEUNG MAX M.
分类号 H01L23/528;(IPC1-7):H03K19/017 主分类号 H01L23/528
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