| 摘要 |
PURPOSE: An isolation method of a semiconductor device is provided to be capable of preventing the deterioration of device characteristics and securing a stable isolation function of an isolation layer by forming a narrow and deep trench without the generation of voids. CONSTITUTION: A mask pattern is formed at the upper portion of a silicon substrate(21) for exposing an isolation region of the silicon substrate. After carrying out the first oxygen ion implantation at the exposed region of the silicon substrate, a trench(26) is formed by etching the exposed region of the silicon substrate. Then, the second oxygen ion implantation is carried out at the bottom portion of the trench. A silicon oxide layer(28) is selectively formed at the resultant structure by carrying out the first annealing process. After depositing an oxide layer(29) on the entire surface of the resultant structure for filling the trench, the oxide layer is polished for exposing the mask pattern. After removing the mask pattern, the second annealing process is carried out at the resultant structure.
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