| 发明名称 |
Method of reducing water spotting and oxide growth on a semiconductor structure |
| 摘要 |
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.
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| 申请公布号 |
US6645311(B2) |
申请公布日期 |
2003.11.11 |
| 申请号 |
US20010845692 |
申请日期 |
2001.04.30 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
YATES DONALD L. |
| 分类号 |
B08B3/00;H01L21/00;H01L21/02;H01L21/306;(IPC1-7):B08B7/04 |
主分类号 |
B08B3/00 |
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