DEVICE, ITS MANUFACTURING METHOD, ELECTROOPTICAL DEVICE, AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device wherein an area doped at a high concentration instead of ion implantation is formed on a semiconductor film.

SOLUTION: The device is provided with a semiconductor film (12) formed on a substrate (11), a gate area (15) that is formed by laminating a gate insulation film (13) formed on the semiconductor film and a gate electrode film (14), an isolating means (A) that prevents the gate electrode films formed on both sides of the gate area from being in contact with another area, a source area and a drain area which are formed on both sides of the gate area by baking a liquid semiconductor material (17).

COPYRIGHT: (C)2004,JPO