| 摘要 |
<P>PROBLEM TO BE SOLVED: To narrower a pitch of salient electrodes and suppress a connection failure of the salient electrodes due to strain, in a structure wherein there is a resin layer between semiconductor chips whose salient electrodes are bonded to each other. <P>SOLUTION: The lower LSI chip 1 and the upper LSI chip 3 are bonded to each other with the salient electrodes 2 and 4 facing each other, and there is the resin layer between the LSI chips 1 and 2. The salient electrodes 2 and 4 are solid-state bonded. Assuming H1 is the height of the salient electrode 2, H2 is the height of the salient electrode 4, and H(=H1+H2) is the total height of a bonded salient electrode 7, H1, H2 and H0 satisfy the formula: H1<H2 and H1<H0<0.4. <P>COPYRIGHT: (C)2004,JPO |
